Shedding light on the initial growth of ZnO during plasma-enhanced atomic layer deposition on vapor-deposited polymer thin films

Interest in atomic layer deposition (ALD) processes on polymer substrates is fueled by the increasing rise of organic electronics and polymer-based nanodevices. This study provides new insights into initial growth interface formation during plasma-enhanced ALD (PE-ALD) ZnO poly ethylene glycol dimethylacrylate (pEGDMA) 2-hydroxyethyl methacrylate (pHEMA) thin films, both deposited initiated chemical vapor (iCVD). In-situ spectroscopic ellipsometry showed that PE-ALD investigated polymers a result two competing processes: plasma etching substrate nucleation growth. During first 10–15 cycles, was found to prevail until at certain point (depending power type polymer) takes over regime linear entered. On pHEMA, though more sensitive etching, film starts early on, whereas pEGDMA, subsurface island appear dominate stage deposition. Despite resulting films are smooth comparable structural quality those grown silicon. These findings contribute deeper understanding providing knowledge essential for successful development applications.